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document number: 94417 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 22-apr-08 1 scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a vsk.170pbf, .250pbf series vishay high power products features ? high voltage ? electrically isolated base plate ? 3500 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? lead (pb)-free ? designed and qualified for industrial level description this new vsk series of magn-a-pak tm modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose applications such as battery chargers, welders, motor drives, ups, etc. electrical specifications product summary i t(av) 170/250 a magn-a-pak tm rohs compliant major ratings and characteristics symbol characteristics vsk.170.. vsk.250.. units i t(av) 85 c 170 250 a i t(rms) 377 555 i tsm 50 hz 5100 8500 60 hz 5350 8900 i 2 t 50 hz 131 361 ka 2 s 60 hz 119 330 i 2 t 1310 3610 ka 2 s v drm /v rrm up to 1600 v t j range - 40 to 130 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse and off-state blocking voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 130 c maximum ma vsk.170- vsk.250- 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94417 2 revision: 22-apr-08 vsk.170pbf, .250pbf series vishay high power products scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a on-state conduction parameter symbol test conditions vsk.170 vsk.250 units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 170 250 a 85 85 c maximum rms on-state current i t(rms) as ac switch 377 555 a maximum peak, one-cycle on-state non-repetitive, surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 5100 8500 t = 8.3 ms 5350 8900 t = 10 ms 100 % v rrm reapplied 4300 7150 t = 8.3 ms 4500 7500 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 131 361 ka 2 s t = 8.3 ms 119 330 t = 10 ms 100 % v rrm reapplied 92.5 255 t = 8.3 ms 84.4 233 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1310 3610 ka 2 s low level value or threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.89 0.97 v high level value of threshold voltage v t(to)2 (i > x i t(av) < i < x i t(av) ), t j = t j maximum 1.12 1.00 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.34 0.60 m high level value on-state slope resistance r t2 (i > x i t(av) < i < x i t(av) ), t j = t j maximum 0.96 0.57 maximum on-state voltage drop v tm i tm = x i t(av) , t j = t j maximum, 180 conduction, average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.60 1.44 v maximum holding current i h anode supply = 12 v, initial i t = 30 a, t j = 25 c 500 500 ma maximum latching current i l anode supply = 12 v, resistive load = 1 , gate pulse: 10 v, 100 s, t j = 25 c 1000 1000 switching parameter symbol test conditions vsk.170 vsk.250 units typical delay time t d t j = 25 c, gate current = 1 a di g /dt = 1 a/s v d = 0.67 % v drm 1.0 s typical rise time t r 2.0 typical turn-off time t q i tm = 300 a; di/dt = 15 a/s; t j = t j maximum; v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 50 - 150 blocking parameter symbol test conditions vsk.170 vsk.250 units maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum 50 ma rms insulation voltage v ins 50 hz, circuit to base, all term inals shorted, 25 c, 1 s 3000 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s
document number: 94417 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 22-apr-08 3 vsk.170pbf, .250pbf series scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a vishay high power products note ? table shows the increment of thermal resistance r thjc when devices operate at diffe rent conduction angles than dc triggering parameter symbol test conditions vsk.170 vsk.250 units maximum peak gate power p gm t p 5 ms, t j = t j maximum 10.0 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 2.0 maximum peak gate current + i gm t p 5 ms, t j = t j maximum 3.0 a maximum peak negative gate voltage - v gt t p 5 ms, t j = t j maximum 5.0 v maximum required dc gate voltage to trigger v gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 4.0 t j = 25 c 3.0 t j = t j maximum 2.0 maximum required dc gate current to trigger i gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 350 ma t j = 25 c 200 t j = t j maximum 100 maximum gate voltage that will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current that willnot trigger i gd t j = t j maximum, rated v drm applied 10.0 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, rated v drm applied 500 a/s thermal and mechanical specifications parameter symbol test conditions vsk.170 vsk.250 units junction operating te mperature range t j - 40 to 130 c storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case per junction r thjc dc operation 0.17 0.125 k/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.02 0.02 mounting torque 10 % map to heatsink a mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 nm busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w vsk.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94417 4 revision: 22-apr-08 vsk.170pbf, .250pbf series vishay high power products scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 60 70 80 90 100 110 120 130 0 40 80 120 160 200 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.170.. series r thjc (dc) = 0.17 k/w 60 70 80 90 100 110 120 130 0 50 100 150 200 250 3 00 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.170.. series r (dc) = 0.17 k/w thjc 0 50 100 150 200 250 300 040801201602 00 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 vsk.170.. series per junction t j = 125c 0 50 100 150 200 250 300 350 0 50 100 150 200 250 3 00 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.170.. series per junction t j = 125c 2000 2500 3000 3500 4000 4500 5000 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v rrm applied following surge. peak half sine wave on-state current (a) vsk.170.. series per junction initial t j = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. control of conduction may not be maintained . initial t j = 130c no voltage reapplied rated v rrm reapplied vsk.170.. series per junction
document number: 94417 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 22-apr-08 5 vsk.170pbf, .250pbf series scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a vishay high power products fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 020406080100120 0 . 3 5 k /w 0 . 3 k / w 0 . 2 5 k / w 0 . 2 k / w 0 . 0 8k / w 0. 1 2 k / w 0 . 1 6 k / w maximum allowable ambient temperature (c) r = 0 . 0 4 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 180 120 90 60 30 maximum total on-state power loss (w) total rms output current (a) conduction angle vsk.170.. series per module t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 2 k / w - d e l t a r 0 . 0 4 k / w t h s a 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 .1 2 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vsk.170.. series single phase bridge connected t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) 0 . 2 5 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 1 k / w 0 . 0 8 k / w 0 . 0 5 k / w 0 . 0 3 k / w r = 0 . 0 1 k / w - d e l t a r t h s a 0 200 400 600 800 1000 1200 1400 1600 0 100200300400500 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.170.. series three phase bridge connected t j = 130c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94417 6 revision: 22-apr-08 vsk.170pbf, .250pbf series vishay high power products scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a fig. 10 - current ratings characteristics fig. 11 - current ratings characteristics fig. 12 - on-state power loss characteristics fig. 13 - on-state power loss characteristics fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current 60 70 80 90 100 110 120 130 0 50 100 150 200 250 3 00 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.250.. series r thjc (dc) = 0.125 k/w 60 70 80 90 100 110 120 130 01002003004005 00 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.250.. series r thjc (dc) = 0.125 k/w 0 50 100 150 200 250 300 350 050100150200250 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 vsk.250.. series per junction t = 130c j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 4 00 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) vsk.250.. series per junction t j = 130c 3500 4000 4500 5000 5500 6000 6500 7000 7500 11010 0 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) vsk.250.. series per junction at any rated load condition and with rated v rrm applied following surge. initial t = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. control of conduction may not be maintained . vsk.250.. series per junction initial t j = 130c no voltage reapplied rated v rrm reapplied
document number: 94417 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 22-apr-08 7 vsk.170pbf, .250pbf series scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a vishay high power products fig. 16 - on-state power loss characteristics fig. 17 - on-state power loss characteristics fig. 18 - on-state power loss characteristics 020406080100120 maximum allowable ambient temperature (c) 0 . 3 k / w 0 . 2 5 k / w 0 . 2 0 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 0 8 k / w 0 . 0 5 k / w r = 0 . 0 2 k / w - d e l t a r t h s a 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 180 120 90 60 30 maximum total on-state power loss (w) conduction angle total rms output current (a) vsk.250.. series per module t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0.02 k / w 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 3 k / w 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 maximum total power loss (w) total output current (a) 180 (sine) 180 (rect) 2 x vsk.250.. series single phase bridge connected t j = 130c 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 0 k / w 0 . 2 5 k / w t h s a 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 maximum total power loss (w) total output current (a) 120 (rect) 3 x vsk.250.. series three phase bridge connected t j = 130c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94417 8 revision: 22-apr-08 vsk.170pbf, .250pbf series vishay high power products scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics fig. 21 - reverse recovery charge characteristics fig. 22 - reverse recovery charge characteristics fig. 23 - gate characteristics 0.511.522.533.544.55 100 1000 10000 instantaneo u s for w ard c u rrent ( v ) instantaneo u s for w ard v oltage ( v ) tj = 25c tj = 130c v sk.170 series per j u nction 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 100 1000 10000 instantaneo u s for w ard c u rrent ( v ) instantaneo u s for w ard v oltage ( v ) tj = 25c tj = 130c v sk.250 series per j u nction 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060708090100 rate of fall of on-state current - di/dt (a/s) typical reverse recovery charge - qrr (c) i tm = 800 a 500 a 300 a 200 a 100 a vsk.170.. series t j = 130 c per junction 50 a 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 1020304050607080901 00 typical reverse recovery charge - qrr (c) rate of fall of on-state current - di/dt (a/s) 500 a 300 a 200 a 100 a t = 130 c per junction j i tm = 800 a 50 a vsk.250.. series t j = 130 c per junction 0.1 1 10 100 0.001 0.01 0.1 1 10 1 00 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rated di/dt : 20 v, 10 ohms; tr < =1s tr<=1 s rectangular gate pulse <=30% rated di/dt : 10v, 20ohms (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms vsk.170/250 series frequency limited by pg(av) (1) (4)
document number: 94417 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 22-apr-08 9 vsk.170pbf, .250pbf series scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a vishay high power products fig. 24 - thermal impedance z thjc characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc vsk.170.. series steady state value: r = 0.17 k/w r = 0.125 k/w (dc operation) thjc thjc transient thermal impedance z (k/w) vsk.250.. series 1 - module type 2 - circuit configuration (see dimensions - link at the end of datasheet) 3 - current rating 4 - voltage code x 100 = v rrm (see voltage ratings table) 5 - lead (pb)-free device code 5 13 24 vsk t 250 - 16 pbf
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94417 10 revision: 22-apr-08 vsk.170pbf, .250pbf series vishay high power products scr/scr and scr/diode (magn-a-pak tm power modules), 170/250 a circuit configuration vskl... vsku... vskv... vskn... vskh... vskt... a v aila b le from 400 v to 1600 v a v aila b le on 1600 v contact factory for different re qu irement + - ~ ~ + - k1 g1 g2 k2 + - ~ ~ + - k1 g1 + - ~ ~ + - - - + + - - k1 g1 g2 k2 + + - - + + k1 g1 g2 k2 - - + + - - g2 k2 + + - + vskk... links to related documents dimensions http://www.vishay.com/doc?95086
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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